dcr3640 w 52 phase control thyristor preliminary information ds5819 - 2 j anuary 20 10 (ln2 6 970 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr3640w52* DCR3640W50 dcr3640w48 dcr3640w46 5200 5000 4800 4600 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. 5000v @ - 40 0 c, 5200v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr3640w52 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 5200v i t(av) 3550a i tsm 49000a dv/dt* 1500v/s di/dt 400a/s * higher dv/dt selections availa ble outline type code: w (see package details for further information) fig. 1 package outline
semiconductor dcr3640w52 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 3550 a i t(rms) rms value - 5576 a i t continuous (direct) on - state current - 5240 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 49 ka i 2 t i 2 t for fusing v r = 0 12.0 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00631 c/w single side cooled anode dc - 0.01115 c/w cathode dc - 0.01453 c/w r th(c - h) thermal resistance C case to heatsink clamping force 76kn double side - 0.0014 c/w (with mounting compound) single side - 0.0028 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 68.0 84.0 kn
semiconductor dcr3640w52 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 200 a/s gate source 30v, 10 ? , non - repetitive - 400 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500a to 1700a at t case = 125c - 0.86 v threshold voltage C high level 1700a to 5000a at t case = 125c - 0.98 v r t on - state slope resistance C low level 500a to 1700a at t case = 125c - 0.2533 m ? on - state slope resistance C high level 1700a to 5000a at t case = 125c - 0.1886 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, 400 750 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt C 1a/s, 2700 6325 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr3640w52 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 30 0 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.722818 b = - 0.002455 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000096 d = 0.010486 these values are valid for t j = 125c for i t 100a to 7000a 0 1000 2000 3000 4000 5000 6000 7000 0.7 1.2 1.7 2.2 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) min 125c max 125c min 25c max 25c
semiconductor dcr3640w52 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 0 1000 2000 3000 4000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 5000 6000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr3640w52 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 0 2 4 6 8 10 12 14 16 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance, z th(j-c) - ( c/kw) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.8816 1.2993 2.8048 1.3305 t i (s) 0.0106818 0.058404 0.3584979 1.1285 anode side cooled r i (c/kw) 1.5197 3.2398 5.7622 0.6312 t i (s) 0.0170581 0.2424644 6.013 15.364 cathode side cooled r i (c/kw) 1.4106 2.4667 6.7451 3.9054 t i (s) 0.0158344 0.1786951 3.6201 6.196 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.00 0.67 180 0.94 0.64 180 0.95 0.65 120 1.16 0.97 120 1.08 0.91 120 1.09 0.92 90 1.33 1.13 90 1.23 1.06 90 1.25 1.07 60 1.48 1.31 60 1.37 1.22 60 1.38 1.23 30 1.61 1.51 30 1.47 1.38 30 1.49 1.40 15 1.66 1.61 15 1.52 1.47 15 1.54 1.49
semiconductor dcr3640w52 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery current 0 5,000 10,000 15,000 20,000 25,000 30,000 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) stored charge, qs - (uc) q smin = 2698*(di/dt) 0.5396 q smax = 6325*(di/dt) 0.4506 co nditio ns: t j =125 o c, v rpeak ~3100v, v rm ~ 2100v. snubber as appro priate to co ntro l reverse vo tlages 0 100 200 300 400 500 600 0 5 10 15 20 25 rate of decay of on-state current- di/dt - (a/us) reverse recovery current, i rr - (a) i rrmin = 44.744*(di/dt) 0.7539 i rrmax = 69.492*(di/dt) 0.7014 conditions: tj = 125c, vrpeak ~ 3100v, vrm ~ 2100v snubber as appropriate to control reverse voltages.
semiconductor dcr3640w52 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor dcr3640w52 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: w fig.16 package outline cathode gate anode 3rd angle projection if in doubt ask do not scale 20 offset (nom.) to gate tube hole ?3.60 x 2.00 deep (in both electrodes) ?1.5 ?84.6 nom. ?120.0 max. ?84.6 nom. for package height see table device maximum thickness (mm) minimum thickness (mm) dcr1594sw28 27.34 26.79 dcr1595sw42 27.57 27.02 dcr1596sw52 27.69 27.14 dcr5450w22 27.265 26.715 dcr4910w28 27.34 26.79 dcr4100w42 27.57 27.02 dcr3640w52 27.69 27.14 dcr3020w65 27.95 27.4 dcr2510w85 28.31 27.76
semiconductor dcr3640w52 10 / 10 www.dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. headquarters operations dynex semiconductor limited doddington road, li ncoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +(0) 1522 502753 / 502901 fax: +(0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom. this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee exp ress or implied is made regarding the capability, performance or sui tability of any product or service. the company reserves the right to alter without prior notice the specification, design o r price of any product or service. information concerning possible methods of use is provided as a guide only and does not constit ute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the users responsib ility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services prov ided subject to the companys conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their resp ective owners.
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